- Mounting Style :
- Package / Case :
- Minimum Operating Temperature :
- Qg - Gate Charge :
- Ausgewählter Filter :
8 Produkt
Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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Ein Angebot |
4,820
Verfügbar auf Lager
|
Infineon Technologies | MOSFET CONSUMER | 20 V | SMD/SMT | TO-252-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 6.8 A | 860 mOhms | 2.5 V | 13 nC | Enhancement | CoolMOS | |||
|
Ein Angebot |
662
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 650V 4.4A TO220FP-3 CoolMOS C6 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 4.4 A | 860 mOhms | 2.5 V | 13 nC | Enhancement | CoolMOS | |||
|
Ein Angebot |
1,485
Verfügbar auf Lager
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Infineon Technologies | MOSFET LOW POWER_LEGACY | 20 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 4.4 A | 860 mOhms | 3 V | 13 nC | Enhancement | CoolMOS | |||
|
Ein Angebot |
470
Verfügbar auf Lager
|
Infineon Technologies | MOSFET CONSUMER | 20 V | Through Hole | TO-262-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 700 V | 7.4 A | 860 mOhms | 2.5 V | 15.3 nC | Enhancement | CoolMOS | |||
|
siehe | Infineon Technologies | MOSFET N-Ch 650V 4.4A TO220FP-3 CoolMOS C6 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 4.4 A | 860 mOhms | 2.5 V | 13 nC | Enhancement | CoolMOS | ||||
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Ein Angebot |
999
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 500V 4.3A DPAK-2 CoolMOS CE | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 6.6 A | 860 mOhms | 2.5 V | 10.5 nC | Enhancement | CoolMOS | |||
|
Ein Angebot |
122
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 650V 4.4A DPAK-2 CoolMOS C6 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 4.4 A | 860 mOhms | 2.5 V | 13 nC | Enhancement | CoolMOS | |||
|
Ein Angebot |
866
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 500V 4.3A DPAK-2 CoolMOS CE | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 6.6 A | 860 mOhms | 2.5 V | 10.5 nC | Enhancement | CoolMOS |
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