- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Number of Channels :
- Qg - Gate Charge :
- Tradename :
- Ausgewählter Filter :
15 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Ein Angebot |
4,494
Verfügbar auf Lager
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Infineon / IR | MOSFET 30V N-CH HEXFET 9.1mOhms 9.3nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 155 C | Tube | 1 Channel | Si | N-Channel | 30 V | 13.6 A | 12.5 mOhms | 1 V | 9.3 nC | Enhancement | |||
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Ein Angebot |
8,060
Verfügbar auf Lager
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Infineon Technologies | MOSFET MOSFT 30V 14A 8.5mOhm 8.3nC Qg | 20 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 14 A | 12.5 mOhms | 8.3 nC | |||||||
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Ein Angebot |
3,861
Verfügbar auf Lager
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Fairchild Semiconductor | MOSFET SO-8 SGL N-CH 30V | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 11 A | 12.5 mOhms | Enhancement | PowerTrench | ||||
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Ein Angebot |
3,261
Verfügbar auf Lager
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Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 10mOhms 10nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 65 A | 12.5 mOhms | 10 nC | Enhancement | ||||
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Ein Angebot |
981
Verfügbar auf Lager
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Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 8.5mOhms 8.3nC | 20 V | SMD/SMT | SO-8 | Tube | 1 Channel | Si | N-Channel | 30 V | 14 A | 12.5 mOhms | 8.3 nC | |||||||
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Ein Angebot |
1,707
Verfügbar auf Lager
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Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 10mOhms 10nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 65 A | 12.5 mOhms | 10 nC | Enhancement | ||||
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Ein Angebot |
1,890
Verfügbar auf Lager
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Infineon / IR | MOSFET MOSFT 30V 14A 8.5mOhm 8.3nC | 20 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 14 A | 12.5 mOhms | 8.3 nC | |||||||
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Ein Angebot |
25,461
Verfügbar auf Lager
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Texas Instruments | MOSFET 60-V Dual N-Channel Power MOSFET | 20 V | SMD/SMT | SOIC-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V | 16 A | 12.5 mOhms | 3 V | 14 nC | NexFET | |||
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siehe | IXYS | MOSFET 80 Amps 100V 0.125 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 80 A | 12.5 mOhms | Enhancement | HyperFET | |||||
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siehe | IXYS | MOSFET 80 Amps 100V 0.125 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 80 A | 12.5 mOhms | Enhancement | HyperFET | |||||
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siehe | IXYS | MOSFET 150 Amps 150V 0.0125 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 150 V | 150 A | 12.5 mOhms | Enhancement | HyperFET | |||||
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siehe | IXYS | MOSFET 150 Amps 150V 0.0125 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 150 V | 150 A | 12.5 mOhms | Enhancement | HyperFET | |||||
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Ein Angebot |
968
Verfügbar auf Lager
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Infineon / IR | MOSFET MOSFT 30V 59A 9.5mOhm 9.7nC | 20 V | SMD/SMT | TO-263-3 | Tube | 1 Channel | Si | N-Channel | 30 V | 59 A | 12.5 mOhms | 9.7 nC | |||||||
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Ein Angebot |
1,589
Verfügbar auf Lager
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Infineon / IR | MOSFET MOSFT 30V 56A 9.5mOhm 9.6nC | 20 V | Through Hole | TO-251-3 | Tube | 1 Channel | Si | N-Channel | 30 V | 56 A | 12.5 mOhms | 9.6 nC | |||||||
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Ein Angebot |
2
Verfügbar auf Lager
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Infineon / IR | MOSFET MOSFT 30V 59A 9.5mOhm 9.7nC | 20 V | SMD/SMT | TO-263-3 | - 55 C | Reel | 1 Channel | Si | N-Channel | 30 V | 59 A | 12.5 mOhms | 9.7 nC | Enhancement |
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