- Hersteller :
- Package / Case :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Ausgewählter Filter :
6 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Ein Angebot |
3,347
Verfügbar auf Lager
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Infineon Technologies | MOSFET 40V Single N-Channel HEXFET Power MOSFET | 20 V | SMD/SMT | DirectFET-MF | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 135 A | 2.3 mOhms | 2.2 V | 81 nC | Enhancement | StrongIRFET | ||
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Ein Angebot |
1,216
Verfügbar auf Lager
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Infineon Technologies | MOSFET MOSFT 55V 135A 4.7mOhm 150nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 135 A | 4.7 mOhms | 4 V | 150 nC | ||||
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Ein Angebot |
308
Verfügbar auf Lager
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Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 4.7mOhms 150nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 135 A | 4.7 mOhms | 2 V to 4 V | 150 nC | Enhancement | |||
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siehe | Infineon Technologies | MOSFET AUTO 55V 1 N-CH HEXFET 4.7mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | Reel | 1 Channel | Si | N-Channel | 55 V | 135 A | 4.7 mOhms | 150 nC | Enhancement | ||||||
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siehe | Infineon Technologies | MOSFET AUTO 55V 1 N-CH HEXFET 4.7mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 55 V | 135 A | 4.7 mOhms | 150 nC | Enhancement | ||||||
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siehe | Infineon / IR | MOSFET AUTO 55V 1 N-CH HEXFET 4.7mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | Reel | 1 Channel | Si | N-Channel | 55 V | 135 A | 4.7 mOhms | 150 nC | Enhancement |
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