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2 Produkt
Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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Ein Angebot |
668
Verfügbar auf Lager
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Infineon / IR | MOSFET 75V Single N-Channel HEXFET | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 197 A | 3.05 mOhms | 3.7 V | 180 nC | Enhancement | StrongIRFET | |||
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Ein Angebot |
116
Verfügbar auf Lager
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Infineon Technologies | MOSFET 75V Single N-Channel HEXFET | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 197 A | 3.05 mOhms | 3.7 V | 180 nC | StrongIRFET |
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