- Hersteller :
- Package / Case :
- Number of Channels :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Ausgewählter Filter :
3 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Ein Angebot |
2,175
Verfügbar auf Lager
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Texas Instruments | MOSFET 30V N-Channel FemtoFETGäó MOSFET 3-PI... | 20 V | SMD/SMT | Picostar-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 5.9 A | 22 mOhms | 900 mV | 5.1 nC | Enhancement | ||
|
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|
Ein Angebot |
713
Verfügbar auf Lager
|
Texas Instruments | MOSFET 30V N-Channel FemtoFETGäó MOSFET 3-PI... | 20 V | SMD/SMT | Picostar-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 5.9 A | 22 mOhms | 900 mV | 5.1 nC | Enhancement | ||
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siehe | Taiwan Semiconductor | MOSFET Dual 30V N channel MOSFET | 20 V | SMD/SMT | SOP-8 | Reel | 2 Channel | Si | N-Channel | 30 V | 5.9 A | 36 mOhms | 1.5 V | 13 nC |
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