- Hersteller :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Ausgewählter Filter :
4 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Ein Angebot |
1,035
Verfügbar auf Lager
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Infineon Technologies | MOSFET N-Ch 150V 83A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 83 A | 10.8 mOhms | 41 nC | Enhancement | OptiMOS | |||
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Ein Angebot |
498
Verfügbar auf Lager
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Infineon Technologies | MOSFET N-Ch 150V 83A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 83 A | 9.4 mOhms | 2 V | 55 nC | Enhancement | OptiMOS | ||
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|
|
Ein Angebot |
570
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 150V 83A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 83 A | 9.4 mOhms | 2 V | 55 nC | Enhancement | OptiMOS | ||
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siehe | Nexperia | MOSFET HIGH PERF TRENCHMOS | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 185 C | Reel | 1 Channel | Si | N-Channel | 55 V | 83 A | 12 mOhms | Enhancement |
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