- Mounting Style :
- Maximum Operating Temperature :
- Number of Channels :
- Rds On - Drain-Source Resistance :
-
- 1.45 mOhms (1)
- 10 mOhms (1)
- 11.5 mOhms (1)
- 11.7 mOhms (1)
- 15.5 mOhms (1)
- 2.8 mOhms (2)
- 230 mOhms (1)
- 25 mOhms (1)
- 29.8 mOhms (1)
- 3.1 mOhms (1)
- 3.8 mOhms (1)
- 36 mOhms (1)
- 39 mOhms (1)
- 390 mOhms (2)
- 4.3 mOhms (1)
- 46 mOhms (1)
- 5 mOhms (1)
- 5.6 mOhms (1)
- 50 mOhms (1)
- 6.3 mOhms (1)
- 64 mOhms (1)
- 85 mOhms (2)
- Ausgewählter Filter :
25 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Ein Angebot |
3,403
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET 30V/20V N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 22 A | 6.3 mOhms | 1.9 V | 9.9 nC | Enhancement | PowerTrench | ||
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Ein Angebot |
2,385
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET 30V N-Channel PowerTrench SyncFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 22 A | 5 mOhms | 1.5 V | 11 nC | PowerTrench SyncFET | |||
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Ein Angebot |
4,453
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET N-Chan PowerTrench MOSFET 80V, 22A | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 22 A | 11.7 mOhms | PowerTrench | |||||
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Ein Angebot |
2,337
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET 30V N-Channel PowerTrench SyncFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 22 A | 4.3 mOhms | 1.5 V | 13 nC | PowerTrench SyncFET | |||
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Ein Angebot |
2,085
Verfügbar auf Lager
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Diodes Incorporated | MOSFET 60V N-Ch Enh FET 60Vdss 20Vgss 100A | 20 V | SMD/SMT | POWERDI5060-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 22 A | 3.1 mOhms | 96.3 nC | Enhancement | ||||
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Ein Angebot |
5,820
Verfügbar auf Lager
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ON Semiconductor | MOSFET NFET 60V 18A 43MOHM | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 22 A | 39 mOhms | 15 nC | |||||
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Ein Angebot |
427
Verfügbar auf Lager
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Infineon Technologies | MOSFET HIGH POWER_NEW | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 22 A | 85 mOhms | 3 V | 42 nC | Enhancement | CoolMOS | ||
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Ein Angebot |
2,380
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 30V 22A DSO-8 OptiMOS 3M | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 22 A | 2.8 mOhms | 1 V | 60 nC | Enhancement | OptiMOS | ||
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Ein Angebot |
5,460
Verfügbar auf Lager
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Fairchild Semiconductor | MOSFET 30V 22A 10mOhms N-Ch PowerTrench | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 22 A | 10 mOhms | 2 V | 17 nC | ||||
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Ein Angebot |
447
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET 100V NCh PowerTrench | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 22 A | 64 mOhms | Enhancement | PowerTrench | ||||
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Ein Angebot |
1,756
Verfügbar auf Lager
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Infineon Technologies | MOSFET N-Ch 75V 22A DPAK-2 OptiMOS | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 22 A | 50 mOhms | Enhancement | OptiMOS | ||||
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Ein Angebot |
162
Verfügbar auf Lager
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Infineon Technologies | MOSFET HIGH POWER_NEW | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 22 A | 85 mOhms | 3 V | 42 nC | Enhancement | CoolMOS | ||
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Ein Angebot |
63
Verfügbar auf Lager
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Infineon Technologies | MOSFET MOSFT 100V 22A 36mOhm 80nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 22 A | 36 mOhms | 80 nC | |||||||
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Ein Angebot |
2,637
Verfügbar auf Lager
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Texas Instruments | MOSFET 30V, N-channel NexFET Pwr MOSFET | 20 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 22 A | 1.45 mOhms | 1.1 V | 49 nC | Enhancement | NexFET | ||
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Ein Angebot |
5,863
Verfügbar auf Lager
|
ROHM Semiconductor | MOSFET 4.5V Drive Nch MOSFET | 20 V | SMD/SMT | HSMT-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 22 A | 3.8 mOhms | 1 V | 45 nC | Enhancement | |||
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Ein Angebot |
288
Verfügbar auf Lager
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Toshiba | MOSFET MOSFET NCh12.2ohm 10V 10uA VDS100V | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 100 V | 22 A | 11.5 mOhms | 2 V to 4 V | 28 nC | Enhancement | ||||
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Ein Angebot |
4,999
Verfügbar auf Lager
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Infineon Technologies | MOSFET N-Ch 30V 22A DSO-8 OptiMOS 3M | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 22 A | 2.8 mOhms | 1 V | 60 nC | Enhancement | OptiMOS | ||
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siehe | IXYS | MOSFET 1KV 22A | 20 V | SMD/SMT | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 22 A | 390 mOhms | Enhancement | HyperFET | |||||
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siehe | Nexperia | MOSFET 40V Mosfet Dual N-Channel | 20 V | SMD/SMT | LFPAK56D-8 | Reel | 2 Channel | Si | N-Channel | 40 V | 22 A | 15.5 mOhms | 3 V | 11.8 nC | Enhancement | ||||||
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siehe | Nexperia | MOSFET N-channel 60 V 43 mOhm MOSFET | 20 V | SMD/SMT | LFPAK56-5 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 22 A | 29.8 mOhms | 3 V | 10.4 nC | |||||
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siehe | Nexperia | MOSFET N-Chan 75V 22A 60W | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 75 V | 22 A | 46 mOhms | |||||||||
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Ein Angebot |
4,576
Verfügbar auf Lager
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Toshiba | MOSFET N-Ch 80V 22A 27W UMOSVIII 710pF 11nC | 20 V | SMD/SMT | TSON-Advance-8 | Reel | 1 Channel | Si | N-Channel | 80 V | 22 A | 25 mOhms | 2 V to 4 V | 11 nC | Enhancement | |||||
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siehe | IXYS | MOSFET 22 Amps 500V 0.23 Rds | 20 V | SMD/SMT | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 22 A | 230 mOhms | Enhancement | HyperFET | |||||
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siehe | IXYS | MOSFET 22 Amps 1000V 0.39 Rds | 20 V | SMD/SMT | ISOPLUS-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 22 A | 390 mOhms | Enhancement | HyperFET | |||||
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Ein Angebot |
551
Verfügbar auf Lager
|
Infineon / IR | MOSFET 25V Single N-Ch HEXFET PWR 50A | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 22 A | 5.6 mOhms | 1.6 V | 17 nC | FastIRFet |
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