- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Ausgewählter Filter :
3 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Ein Angebot |
42
Verfügbar auf Lager
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Microsemi | MOSFET Power MOSFET - MOS5 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Reel | Si | N-Channel | 300 V | 40 A | 85 mOhms | 4 V | 130 nC | Enhancement | Power MOS V | ||
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Ein Angebot |
15
Verfügbar auf Lager
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Microsemi | MOSFET Power MOSFET - MOS5 | 30 V | SMD/SMT | D3PAK-3 | - 55 C | + 150 C | Si | N-Channel | 200 V | 67 A | 38 mOhms | 4 V | 148 nC | Enhancement | Power MOS V | |||
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Ein Angebot |
14
Verfügbar auf Lager
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Microsemi | MOSFET Power FREDFET - MOS5 | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Si | N-Channel | 200 V | 100 A | 22 mOhms | 4 V | 290 nC | Enhancement | Power MOS V |
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