MOSFET - Inix Electronic

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3 Produkt

Bild	Modell	Preis	Anzahl		Lager	Hersteller	Beschreibung	Vgs - Gate-Source Voltage	Mounting Style	Package / Case	Minimum Operating Temperature	Maximum Operating Temperature	Packaging	Number of Channels	Technology	Transistor Polarity	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Channel Mode	Tradename
	IXFB170N30P	1+ $9.1320 5+ $9.0400 10+ $8.4240 25+ $8.0480	Ein Angebot	PDF RFQ	25 Verfügbar auf Lager	IXYS	MOSFET Polar Power MOSFET HiPerFET	20 V	Through Hole	PLUS-264-3	- 55 C	+ 150 C	Tube		Si	N-Channel	300 V	170 A	18 mOhms	4.5 V	258 nC	Enhancement	Polar, HiPerFET
	IXFK170N20P	1+ $6.8280 10+ $6.2800 25+ $6.0200 100+ $5.3040	Ein Angebot	PDF RFQ	7 Verfügbar auf Lager	IXYS	MOSFET 170 Amps 200V 0.014 Rds	20 V	Through Hole	TO-264-3	- 55 C	+ 175 C	Tube	1 Channel	Si	N-Channel	200 V	170 A	14 mOhms	5 V	185 nC	Enhancement	Polar, HiPerFET
	IXFX170N20P	1+ $6.7600 10+ $6.2160 25+ $5.9600 100+ $5.2520	Ein Angebot	PDF RFQ	40 Verfügbar auf Lager	IXYS	MOSFET Polar HiperFET Power MOSFET	20 V	Through Hole	TO-247-3	- 55 C	+ 175 C	Tube		Si	N-Channel	200 V	170 A	14 mOhms	5 V	185 nC	Enhancement	Polar, HiPerFET

IXFB170N30P

IXFB170N30P

IXYS

MOSFET Polar Power MOSFET HiPerFET

Stock : 25

1+: $9.1320

5+: $9.0400

10+: $8.4240

25+: $8.0480

IXFK170N20P

IXFK170N20P

IXYS

MOSFET 170 Amps 200V 0.014 Rds

Stock : 7

1+: $6.8280

10+: $6.2800

25+: $6.0200

100+: $5.3040

IXFX170N20P

IXFX170N20P

IXYS

MOSFET Polar HiperFET Power MOSFET

Stock : 40

1+: $6.7600

10+: $6.2160

25+: $5.9600

100+: $5.2520

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