- Vgs - Gate-Source Voltage :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Ausgewählter Filter :
3 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Ein Angebot |
6,287
Verfügbar auf Lager
|
Central Semiconductor | MOSFET 20V N-Ch P-Ch FET 8.0Vgs 125mW | 8 V, 8 V | SMD/SMT | SOT-963-6 | - 65 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V, 20 V | 160 mA, 140 mA | 1.5 Ohms, 4 Ohms | 400 mV, 1 V | 0.458 nC, 0.5 nC | Enhancement | Attomini | ||
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siehe | Central Semiconductor | MOSFET DUAL N-CHNL MOSFET | 8 V | SMD/SMT | SOT-963-6 | - 65 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 160 mA | 3 Ohms | Enhancement | Attomini | |||||
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Ein Angebot |
240,000
Verfügbar auf Lager
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Central Semiconductor | MOSFET 20V P-Ch Enh FET 8.0Vgs 125mW 0.5mm | Reel | Si | Attomini |
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