- Mounting Style :
- Package / Case :
- Ausgewählter Filter :
5 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Channel Mode | Tradename | |
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Ein Angebot |
50
Verfügbar auf Lager
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IXYS | MOSFET Polar3 HiPerFET Power MOSFET | Through Hole | TO-247-3 | Tube | Si | N-Channel | 500 V | 34 A | 180 mOhms | HyperFET | |||||||
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siehe | IXYS | MOSFET Polar3 HiPerFET Power MOSFET | Through Hole | TO-3P-3 | Tube | Si | N-Channel | 500 V | 34 A | 180 mOhms | HyperFET | ||||||||
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siehe | IXYS | MOSFET 600V 36A | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 36 A | 180 mOhms | Enhancement | HyperFET | |||
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siehe | IXYS | MOSFET 600V 36A | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 36 A | 180 mOhms | Enhancement | HyperFET | |||
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siehe | IXYS | MOSFET 36 Amps 550V 0.16 Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 550 V | 36 A | 180 mOhms | Enhancement | HyperFET |
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