- Mounting Style :
- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Ausgewählter Filter :
5 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Channel Mode | Tradename | |
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Ein Angebot |
476
Verfügbar auf Lager
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IXYS | MOSFET 7 Amps 1000V | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 7 A | 1.9 Ohms | HyperFET | |||
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Ein Angebot |
112
Verfügbar auf Lager
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IXYS | MOSFET 7 Amps 800V 1.44 Rds | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 7 A | 1.4 Ohms | Enhancement | HyperFET | ||
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siehe | IXYS | MOSFET 600V 7A | SMD/SMT | TO-263-3 | Tube | Si | N-Channel | 600 V | 7 A | 1.15 Ohms | HyperFET | ||||||||
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siehe | IXYS | MOSFET 7 Amps 800V | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 7 A | 1.4 Ohms | Enhancement | HyperFET | |||
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siehe | IXYS | MOSFET 7 Amps 900V 1.5W Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 7 A | 1.5 Ohms | Enhancement | HyperFET |
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