- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Number of Channels :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Ausgewählter Filter :
20 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Ein Angebot |
42
Verfügbar auf Lager
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Advanced Linear Devices | MOSFET Dual N-Ch Matched Pr VGS=0.0V | 10.6 V | SMD/SMT | SOIC-8 | 0 C | + 70 C | Tube | 2 Channel | Si | N-Channel | 10 V | 79 mA | 14 Ohms | 1.4 V | Enhancement | EPAD | ||
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Ein Angebot |
22
Verfügbar auf Lager
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Advanced Linear Devices | MOSFET Dual N-Ch Matched Pr VGS=0.0V | 10.6 V, 10.6 V | SMD/SMT | SOIC-8 | 0 C | + 70 C | Tube | 2 Channel | Si | N-Channel | 10 V, 10 V | 79 mA, 79 mA | 14 Ohms, 14 Ohms | 780 mV | Enhancement | EPAD | ||
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Ein Angebot |
9
Verfügbar auf Lager
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Advanced Linear Devices | MOSFET Dual N-Ch Matched Pr VGS=0.0V | 10.6 V, 10.6 V | Through Hole | PDIP-8 | 0 C | + 70 C | Tube | 2 Channel | Si | N-Channel | 10 V, 10 V | 79 mA, 79 mA | 14 Ohms, 14 Ohms | 180 mV, 180 mV | Enhancement | EPAD | ||
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|
Ein Angebot |
30
Verfügbar auf Lager
|
Advanced Linear Devices | MOSFET Dual N-Ch Matched Pr VGS=0.0V | 10.6 V, 10.6 V | Through Hole | PDIP-8 | 0 C | + 70 C | Tube | 2 Channel | Si | N-Channel | 10 V, 10 V | 79 mA, 79 mA | 14 Ohms, 14 Ohms | 780 mV | Enhancement | EPAD | ||
|
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Ein Angebot |
37
Verfügbar auf Lager
|
Advanced Linear Devices | MOSFET Quad N-Ch Matched Pr VGS=0.0V | 10.6 V | Through Hole | PDIP-16 | 0 C | + 70 C | Tube | 4 Channel | Si | N-Channel | 10 V | 70 mA | 25 Ohms | 0.8 V | Enhancement | EPAD | ||
|
|
Ein Angebot |
38
Verfügbar auf Lager
|
Advanced Linear Devices | MOSFET Quad N-Ch Matched Pr VGS=0.0V | 10.6 V | SMD/SMT | SOIC-16 | 0 C | + 70 C | Tube | 4 Channel | Si | N-Channel | 10 V | 70 mA | 25 Ohms | 780 mV | Enhancement | EPAD | ||
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|
Ein Angebot |
48
Verfügbar auf Lager
|
Advanced Linear Devices | MOSFET Dual N-Ch Matched Pr VGS=0.0V | 10.6 V, 10.6 V | SMD/SMT | SOIC-8 | 0 C | + 70 C | Tube | 2 Channel | Si | N-Channel | 10 V, 10 V | 79 mA, 79 mA | 14 Ohms, 14 Ohms | 180 mV, 180 mV | Enhancement | EPAD | ||
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|
siehe | Advanced Linear Devices | MOSFET Dual N-Ch Matched Pr VGS=0.0V | 10.6 V | Through Hole | PDIP-8 | 0 C | + 70 C | Tube | 2 Channel | Si | N-Channel | 10 V | 79 mA | 14 Ohms | 0.4 V | Enhancement | EPAD | |||
|
|
|
siehe | Advanced Linear Devices | MOSFET Dual N-Ch Matched Pr VGS=0.0V | 10.6 V | SMD/SMT | SOIC-8 | 0 C | + 70 C | Tube | 2 Channel | Si | N-Channel | 10 V | 79 mA | 14 Ohms | 0.4 V | Enhancement | EPAD | |||
|
|
|
siehe | Advanced Linear Devices | MOSFET Quad N-Ch Matched Pr VGS=0.0V | 10.6 V | SMD/SMT | SOIC-16 | 0 C | + 70 C | Tube | 4 Channel | Si | N-Channel | 10 V | 70 mA | 25 Ohms | 0.2 V | Enhancement | EPAD | |||
|
|
|
siehe | Advanced Linear Devices | MOSFET Quad N-Ch Matched Pr VGS=0.0V | 10.6 V | Through Hole | PDIP-16 | 0 C | + 70 C | Tube | 4 Channel | Si | N-Channel | 10 V | 70 mA | 25 Ohms | 0.8 V | Enhancement | EPAD | |||
|
|
|
siehe | Advanced Linear Devices | MOSFET Quad N-Ch Matched Pr VGS=0.0V | 10.6 V | Through Hole | PDIP-16 | 0 C | + 70 C | Tube | 4 Channel | Si | N-Channel | 10 V | 70 mA | 25 Ohms | 0.2 V | Enhancement | EPAD | |||
|
|
|
siehe | Advanced Linear Devices | MOSFET Quad N-Ch Matched Pr VGS=0.0V | 10.6 V | SMD/SMT | SOIC-16 | 0 C | + 70 C | Tube | 4 Channel | Si | N-Channel | 10 V | 70 mA | 25 Ohms | 0.8 V | Enhancement | EPAD | |||
|
|
|
siehe | Advanced Linear Devices | MOSFET Dual N-Ch Matched Pr VGS=0.0V | 10.6 V | Through Hole | PDIP-8 | 0 C | + 70 C | Tube | 2 Channel | Si | N-Channel | 10 V | 79 mA | 14 Ohms | 0.8 V | Enhancement | EPAD | |||
|
|
|
siehe | Advanced Linear Devices | MOSFET Dual N-Ch Matched Pr VGS=0.0V | 10.6 V | SMD/SMT | SOIC-8 | 0 C | + 70 C | Tube | 2 Channel | Si | N-Channel | 10 V | 79 mA | 14 Ohms | 0.8 V | Enhancement | EPAD | |||
|
|
|
siehe | Advanced Linear Devices | MOSFET Quad N-Ch Matched Pr VGS=0.0V | 10.6 V | SMD/SMT | SOIC-16 | 0 C | + 70 C | Tube | 4 Channel | Si | N-Channel | 10 V | 70 mA | 25 Ohms | 0.4 V | Enhancement | EPAD | |||
|
|
|
siehe | Advanced Linear Devices | MOSFET Quad N-Ch Matched Pr VGS=0.0V | 10.6 V | Through Hole | PDIP-16 | 0 C | + 70 C | Tube | 4 Channel | Si | N-Channel | 10 V | 70 mA | 25 Ohms | 1.4 V | Enhancement | EPAD | |||
|
|
|
siehe | Advanced Linear Devices | MOSFET Quad N-Ch Matched Pr VGS=0.0V | 10.6 V | Through Hole | PDIP-16 | 0 C | + 70 C | Tube | 4 Channel | Si | N-Channel | 10 V | 70 mA | 25 Ohms | 0.4 V | Enhancement | EPAD | |||
|
|
|
siehe | Advanced Linear Devices | MOSFET Quad N-Ch Matched Pr VGS=0.0V | 10.6 V | SMD/SMT | SOIC-16 | 0 C | + 70 C | Tube | 4 Channel | Si | N-Channel | 10 V | 70 mA | 25 Ohms | 1.4 V | Enhancement | EPAD | |||
|
|
|
siehe | Advanced Linear Devices | MOSFET Dual N-Ch Matched Pr VGS=0.0V | 10.6 V | Through Hole | PDIP-8 | 0 C | + 70 C | Tube | 2 Channel | Si | N-Channel | 10 V | 79 mA | 14 Ohms | 1.4 V | Enhancement | EPAD |
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