- Package / Case :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Ausgewählter Filter :
2 Produkt
Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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Ein Angebot |
5,334
Verfügbar auf Lager
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Diodes Incorporated | MOSFET P-Ch -20V ENH Mode 35mOhm -4.5V -6.0A | 12 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 6 A | 35 mOhms | - 1.5 V | 15.4 nC | Enhancement | |||
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Ein Angebot |
182
Verfügbar auf Lager
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Diodes Incorporated | MOSFET MOSFET P-CHANNEL SOT-23 | 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3.6 A | 23 mOhms | 15.4 nC |
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