- Hersteller :
- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Tradename :
- Ausgewählter Filter :
4 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Ein Angebot |
734
Verfügbar auf Lager
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Infineon / IR | MOSFET HEXFET Power MOSFET 40V Single N-Channel | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 426 A | 970 mOhms | 2.2 V | 460 nC | Enhancement | StrongIRFET | ||
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Ein Angebot |
258
Verfügbar auf Lager
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Infineon / IR | MOSFET 40V 195A 1.4mOhm HEXFET 366W 300nC | 20 V | Through Hole | TO-247-3 | Tube | Si | N-Channel | 40 V | 404 A | 1.3 mOhms | 460 nC | StrongIRFET | |||||||
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Ein Angebot |
8
Verfügbar auf Lager
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IXYS | MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 175 C | Tube | Si | N-Channel | 150 V | 240 A | 5.2 mOhms | 460 nC | Enhancement | HiPerFET | ||||
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Ein Angebot |
68
Verfügbar auf Lager
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Infineon Technologies | MOSFET 40V 1.3mOhm 195A HEXFET 375W 300nC | 20 V | Through Hole | TO-220-3 | Tube | Si | N-Channel | 40 V | 409 A | 1.3 mOhms | 460 nC | StrongIRFET |
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