Modell	Preis	Anzahl		Lager	Hersteller	Beschreibung	Vgs - Gate-Source Voltage	Mounting Style	Package / Case	Minimum Operating Temperature	Maximum Operating Temperature	Packaging	Number of Channels	Technology	Transistor Polarity	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Channel Mode
DMN1019UFDE-7	1+ $0.1720 10+ $0.1416 100+ $0.0864 1000+ $0.0668 3000+ $0.0572	Ein Angebot	PDF RFQ	14,078 Verfügbar auf Lager	Diodes Incorporated	MOSFET MOSFET BVDSS: 8V-24V U-DFN2020-6 T&R 3K	8 V	SMD/SMT	U-DFN2020-E-6	- 55 C	+ 150 C	Reel	1 Channel	Si	N-Channel	12 V	11 A	10 mOhms	0.8 V	27.3 nC	Enhancement
BUK9K32-100EX	1+ $0.5680 10+ $0.4840 100+ $0.3708 500+ $0.3276 1000+ $0.2588	Ein Angebot	PDF RFQ	1,927 Verfügbar auf Lager	Nexperia	MOSFET Dual N-channel 100 V	15 V	SMD/SMT	LFPAK33-5	- 55 C	+ 175 C	Reel	2 Channel	Si	N-Channel	100 V	26 A	26.6 mOhms	1.7 V	27.3 nC	Enhancement
STL8N6LF6AG	1+ $0.4280 10+ $0.3652 100+ $0.2804 500+ $0.2480 3000+ $0.1736	Ein Angebot	PDF RFQ	2,982 Verfügbar auf Lager	STMicroelectronics	MOSFET Automotive-grade dual N-channel 60 V, 27 mO typ., 20 A STrip...	-	SMD/SMT	PowerFLAT-5x6-8	- 55 C	+ 175 C	Reel	2 Channel	Si	N-Channel	60 V	9.6 A	43 mOhms	2.5 V	27.3 nC	Enhancement
DMN1019USN-7	1+ $0.1720 10+ $0.1300 100+ $0.0704 1000+ $0.0528 3000+ $0.0456	Ein Angebot	PDF RFQ	617 Verfügbar auf Lager	Diodes Incorporated	MOSFET 12V N-Ch Enh FET 2426pF 27.3nC	4.5 V	SMD/SMT	SOT-23-3	- 55 C	+ 150 C	Reel	1 Channel	Si	N-Channel	12 V	9.3 A	41 mOhms	0.53 V	27.3 nC	Enhancement