- Hersteller :
- Package / Case :
- Maximum Operating Temperature :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Ausgewählter Filter :
2 Produkt
Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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Ein Angebot |
1,071
Verfügbar auf Lager
|
STMicroelectronics | MOSFET N-Ch 60 Volt 55 Amp | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 50 A | 15 mOhms | 3 V | 44.5 nC | Enhancement | |||
|
Ein Angebot |
11
Verfügbar auf Lager
|
IXYS | MOSFET High Voltage Power MOSFET | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 1500 V | 2.5 A | 6 Ohms | 5 V | 44.5 nC | Enhancement |
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