Schaffung einer zuverlässigen Handelsplattform für globale Hersteller und Lieferanten.
Vgs - Gate-Source Voltage :
Number of Channels :
Transistor Polarity :
Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
Rds On - Drain-Source Resistance :
Vgs th - Gate-Source Threshold Voltage :
Ausgewählter Filter :
3 Produkt
Bild Modell Preis Anzahl Lager Hersteller Beschreibung Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
DMP3028LFDE-13
1+
$0.1680
10+
$0.1392
100+
$0.0848
1000+
$0.0656
10000+
$0.0524
Ein Angebot
RFQ
8,608
Verfügbar auf Lager
Diodes Incorporated MOSFET 30V P-Ch Enh FET 32mOhm -10V -6.8A 20 V SMD/SMT U-DFN2020-E-6 - 55 C + 150 C Reel 1 Channel Si P-Channel - 30 V - 5.3 A 60 mOhms - 1 V to - 2.4 V 10.9 nC Enhancement  
DMP3028LFDE-7
1+
$0.1680
10+
$0.1392
100+
$0.0848
1000+
$0.0656
3000+
$0.0560
Ein Angebot
RFQ
3,685
Verfügbar auf Lager
Diodes Incorporated MOSFET 30V P-Ch Enh FET 32mOhm -10V -6.8A 20 V SMD/SMT U-DFN2020-E-6 - 55 C + 150 C Reel 1 Channel Si P-Channel - 30 V - 5.3 A 60 mOhms - 1 V to - 2.4 V 10.9 nC Enhancement  
CSD83325L
1+
$0.2520
10+
$0.2220
25+
$0.2128
100+
$0.1700
3000+
$0.0840
Ein Angebot
RFQ
3,548
Verfügbar auf Lager
Texas Instruments MOSFET CSD83325L, Dual N-Ch nel NexFET? 10 V, 10 V SMD/SMT BGA-6 - 55 C + 150 C Reel 2 Channel Si N-Channel 12 V, 12 V 8 A 7.9 mOhms 750 mV 10.9 nC Enhancement NexFET