- Hersteller :
- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Ausgewählter Filter :
2 Produkt
Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Tradename | |
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Ein Angebot |
94
Verfügbar auf Lager
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STMicroelectronics | MOSFET N-Ch 100V 4.1 160A STripFET DeepGATE | 4 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 120 A | 5.5 mOhms | 4 V | 192 nC | ||||||
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Ein Angebot |
430
Verfügbar auf Lager
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Texas Instruments | MOSFET 25V NCH NexFET Pwr MOSFET | 20 V | SMD/SMT | VSON-Clip-8 | - 40 C | + 85 C | Reel | 1 Channel | Si | N-Channel | 25 V | 100 A | 590 uOhms | 1.5 V | 192 nC | NexFET |
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