- Hersteller :
- Package / Case :
- Number of Channels :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Ausgewählter Filter :
3 Produkt
Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Ein Angebot |
3,621
Verfügbar auf Lager
|
Diodes Incorporated | MOSFET MOSFET SOT-26 20V, 3.2/4.2A | 8 V, 8 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V, 20 V | 4.2 A, 4.2 A | 22 mOhms, 22 mOhms | 500 mV, 500 mV | 8.3 nC, 8.3 nC | Enhancement | |||
|
Ein Angebot |
1,795
Verfügbar auf Lager
|
Texas Instruments | MOSFET High Duty Cycle Sync Buck NexFET | 8 V, 8 V | SMD/SMT | VSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V, 30 V | 20 A, 20 A | 8.3 mOhms, 8.3 mOhms | 750 mV, 750 mV | 8.3 nC, 8.3 nC | Enhancement | |||
|
Ein Angebot |
335
Verfügbar auf Lager
|
Texas Instruments | MOSFET Sync Buck NexFET Power Block | 8 V, 8 V | SMD/SMT | VSON-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V, 30 V | 20 A, 20 A | 8.3 mOhms, 8.3 mOhms | 750 mV, 750 mV | 8.3 nC, 8.3 nC | Enhancement |
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