- Package / Case :
- Ausgewählter Filter :
2 Produkt
Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Maximum Operating Temperature | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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Ein Angebot |
45
Verfügbar auf Lager
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Toshiba | MOSFET N-Ch 60V 3280pF 48.2nC 68A 36W | 20 V | Through Hole | TO-220FP-3 | + 175 C | 1 Channel | Si | N-Channel | 60 V | 68 A | 3.3 mOhms | 1.5 V | 48.2 nC | Enhancement | |||
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Ein Angebot |
47
Verfügbar auf Lager
|
Toshiba | MOSFET N-Ch 60V 3280pF 48.2nC 106A 87W | 20 V | Through Hole | TO-220-3 | + 175 C | 1 Channel | Si | N-Channel | 60 V | 106 A | 3.3 mOhms | 1.5 V | 48.2 nC | Enhancement |
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