Modell	Preis	Anzahl		Lager	Hersteller	Beschreibung	Vgs - Gate-Source Voltage	Mounting Style	Package / Case	Minimum Operating Temperature	Maximum Operating Temperature	Packaging	Number of Channels	Technology	Transistor Polarity	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Channel Mode
STP12N120K5	1+ $3.6680 10+ $3.3160 25+ $3.1640 100+ $2.7480	Ein Angebot	PDF RFQ	1,934 Verfügbar auf Lager	STMicroelectronics	MOSFET POWER MOSFET	30 V	Through Hole	TO-220-3	- 55 C	+ 150 C		1 Channel	Si	N-Channel	1.2 kV	12 A	620 mOhms	3 V	44.2 nC	Enhancement
STF12N120K5	1+ $3.8560 10+ $3.4840 25+ $3.3240 100+ $2.8840	Ein Angebot	PDF RFQ	329 Verfügbar auf Lager	STMicroelectronics	MOSFET N-channel 1200 V, 0.58 Ohm typ., 12 A MDmesh K5 Power MOS...	30 V	Through Hole	TO-220-3	- 55 C	+ 150 C		1 Channel	Si	N-Channel	1200 V	12 A	690 mOhms	3 V to 5 V	44.2 nC	Enhancement
STFW12N120K5	1+ $4.1760 10+ $3.7720 25+ $3.5960 100+ $3.1240	Ein Angebot	PDF RFQ	290 Verfügbar auf Lager	STMicroelectronics	MOSFET N-channel 1200 V, 0.58 Ohm typ., 12 A Zener-protected MDmesh...	30 V	Through Hole	TO-3PF-3	- 55 C	+ 150 C		1 Channel	Si	N-Channel	1.2 kV	12 A	620 mOhms	3 V	44.2 nC	Enhancement
STWA12N120K5	1+ $4.4320 10+ $4.0040 25+ $3.8200 100+ $3.3160	Ein Angebot	PDF RFQ	593 Verfügbar auf Lager	STMicroelectronics	MOSFET N-channel 1200 V, 0.62 Ohm typ., 12 A MDmesh K5 Power MOS...	30 V	Through Hole	TO-247-3	- 55 C	+ 150 C		1 Channel	Si	N-Channel	1.2 kV	12 A	620 mOhms	3 V	44.2 nC	Enhancement
BUK9Y11-80EX	1+ $0.4120 10+ $0.3512 100+ $0.2696 500+ $0.2384 1000+ $0.1880	Ein Angebot	PDF RFQ	2,163 Verfügbar auf Lager	Nexperia	MOSFET N-channel 80 V 11 mo FET	15 V	SMD/SMT	LFPAK56-5	- 55 C	+ 175 C	Reel	1 Channel	Si	N-Channel	80 V	84 A	8.1 mOhms	1.7 V	44.2 nC	Enhancement
STH12N120K5-2	1+ $3.9680 10+ $3.5840 25+ $3.4200 100+ $2.9680 1000+ $2.2520	Ein Angebot	PDF RFQ	1,900 Verfügbar auf Lager	STMicroelectronics	MOSFET POWER MOSFET	30 V	SMD/SMT	H2PAK-2	- 55 C	+ 150 C	Reel	1 Channel	Si	N-Channel	1.2 kV	12 A	620 mOhms	3 V	44.2 nC	Enhancement