- Hersteller :
- Package / Case :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Tradename :
- Ausgewählter Filter :
4 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Ein Angebot |
34,976
Verfügbar auf Lager
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Infineon Technologies | MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 50 A | 5.4 mOhms | 1.2 V | 67 nC | Enhancement | OptiMOS | ||
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Ein Angebot |
2,997
Verfügbar auf Lager
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Fairchild Semiconductor | MOSFET N-Channel PowerTrench MOSFET, PowerClip 33 Single | 20 V | SMD/SMT | Power-33-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 174 A | 1.3 mOhms | 1.2 V | 67 nC | Enhancement | PowerTrench Power Clip | ||
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Ein Angebot |
194
Verfügbar auf Lager
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Infineon Technologies | MOSFET N-Ch 60V 20A TSDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 20 A | 5.3 mOhms | 1.2 V | 67 nC | Enhancement | OptiMOS | ||
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Ein Angebot |
15,000
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 60V 20A TSDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 20 A | 5.3 mOhms | 1.2 V | 67 nC | Enhancement | OptiMOS |
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