- Vgs - Gate-Source Voltage :
- Package / Case :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Ausgewählter Filter :
5 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
Ein Angebot |
47,881
Verfügbar auf Lager
|
Infineon Technologies | MOSFET MOSFT 30V 1.2A 250mOhm 3.3nC LogLvl | 20 V | SMD/SMT | SOT-23-3 | Reel | 1 Channel | Si | N-Channel | 30 V | 1.2 A | 400 mOhms | 3.3 nC | ||||||
|
|
|
Ein Angebot |
2,920
Verfügbar auf Lager
|
ON Semiconductor | MOSFET PCH 1.8V DRIVE SERIE | +/- 10 V | SMD/SMT | SOT-23-3 | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 2.5 V | 105 mOhms | - 1.4 V | 3.3 nC | Enhancement | |||
|
|
Ein Angebot |
846
Verfügbar auf Lager
|
GaN Systems | MOSFET 650V 15A E-Mode GaN | 10 V | SMD/SMT | Reel | 1 Channel | GaN | N-Channel | 650 V | 110 mOhms | 1.6 V | 3.3 nC | |||||||
|
|
Ein Angebot |
976
Verfügbar auf Lager
|
Texas Instruments | MOSFET 20V P-Ch NexFET | 8 V | SMD/SMT | DSBGA-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3 A | 92 mOhms | - 0.8 V | 3.3 nC | |||
|
|
|
Ein Angebot |
14,800
Verfügbar auf Lager
|
Infineon Technologies | MOSFET MOSFT 30V 1.2A 250mOhm 3.3nC LogLvl | 20 V | SMD/SMT | SOT-23-3 | Reel | 1 Channel | Si | N-Channel | 30 V | 1.2 A | 400 mOhms | 3.3 nC |
1 / 1 Seite
