- Hersteller :
- Package / Case :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Ausgewählter Filter :
5 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
Ein Angebot |
6,804
Verfügbar auf Lager
|
Nexperia | MOSFET 30V 200 MA DUAL P-CH TRENCH MOSFET | 8 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 30 V | - 200 mA | 2.8 Ohms | 0.55 nC | ||||
|
|
Ein Angebot |
5,064
Verfügbar auf Lager
|
Diodes Incorporated | MOSFET 60V N-Ch Enh FET 20Vgs 0.4A 32pF | 20 V | SMD/SMT | X1-DFN1212-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 400 mA | 1.4 Ohms | 1 V | 0.55 nC | Enhancement | ||
|
|
Ein Angebot |
3,502
Verfügbar auf Lager
|
Nexperia | MOSFET 30V 230 MA P-CH TRENCH MOSFET | 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 230 mA | 2.8 Ohms | - 0.9 V | 0.55 nC | Enhancement | ||
|
|
Ein Angebot |
806
Verfügbar auf Lager
|
Nexperia | MOSFET 30V 220 MA DUAL P-CH TRENCH MOSFET | SMD/SMT | SOT-666-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 30 V | - 220 mA | 2.8 Ohms | - 0.9 V | 0.55 nC | Enhancement | |||
|
|
|
siehe | Diodes Incorporated | MOSFET 60V N-Ch Enh FET 20Vgs 0.4A 32pF | 20 V | SMD/SMT | X1-DFN1212-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 400 mA | 1.4 Ohms | 1 V | 0.55 nC | Enhancement |
1 / 1 Seite
