- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Ausgewählter Filter :
2 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Ein Angebot |
2,045
Verfügbar auf Lager
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Diodes Incorporated | MOSFET FET BVDSS 31V 40V 1.3W 1180pF 21.3nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 40 V | 6.9 A, 4.5 A | 32 mOhms, 55 mOhms | - 2.2 V, 2.4 V | 19.1 nC, 21.5 nC | Enhancement | ||
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|
Ein Angebot |
2,468
Verfügbar auf Lager
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Diodes Incorporated | MOSFET Comp ENH FET 40VDs 20Vgs 1.3W | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 40 V, - 40 V | 7 A | 20 mOhms, 40 mOhms | 3 V | 19.1 nC, 21.5 nC | Enhancement |
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