- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Transistor Polarity :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Tradename :
- Ausgewählter Filter :
8 Produkt
Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Ein Angebot |
1,660
Verfügbar auf Lager
|
Vishay / Siliconix | MOSFET 80V 50A 136W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 80 V | - 50 A | 0.02 Ohms | - 2.5 V | 137 nC | Enhancement | TrenchFET | |||
|
Ein Angebot |
2,800
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 40V 160A D2PAK-6 OptiMOS-T2 | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 160 A | 1.4 mOhms | 2 V | 137 nC | Enhancement | OptiMOS | |||
|
Ein Angebot |
3,614
Verfügbar auf Lager
|
Nexperia | MOSFET N-Ch 60V 2.2 mOhms | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 120 A | 2.2 mOhms | 3 V | 137 nC | |||||
|
Ein Angebot |
503
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 120V 100A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 120 V | 100 A | 4.8 mOhms | 3 V | 137 nC | OptiMOS | ||||
|
Ein Angebot |
1,045
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 40V 160A D2PAK-6 OptiMOS-T2 | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 160 A | 1.4 mOhms | 2 V | 137 nC | Enhancement | ||||
|
Ein Angebot |
734
Verfügbar auf Lager
|
Vishay / Siliconix | MOSFET P-Channel 80V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 80 V | - 50 A | 36 S | - 2.5 V | 137 nC | Enhancement | TrenchFET | |||
|
Ein Angebot |
213
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET 80V N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 229 A | 2.4 mOhms | 4.5 V | 137 nC | Enhancement | PowerTrench | |||
|
Ein Angebot |
407
Verfügbar auf Lager
|
Nexperia | MOSFET N-Ch 60V 2.2 mOhms | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 120 A | 2.2 mOhms | 3 V | 137 nC |
1 / 1 Seite