- Transistor Polarity :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Ausgewählter Filter :
2 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
Ein Angebot |
70
Verfügbar auf Lager
|
Nexperia | MOSFET 40V 2A PNP Trans N-chan Trench MOSFET | SMD/SMT | DFN2020-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 40 V | 1.8 A | 580 mOhms | 0.7 V | 0.89 nC | Enhancement | |||
|
|
|
siehe | Nexperia | MOSFET BISS | 8 V | SMD/SMT | DFN2020-6 | - 55 C | + 150 C | Reel | Si | N-Channel | 30 V | 660 mA | 370 mOhms | 0.89 nC |
1 / 1 Seite
