- Package / Case :
- Number of Channels :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Tradename :
- Ausgewählter Filter :
5 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Ein Angebot |
2,500
Verfügbar auf Lager
|
STMicroelectronics | MOSFET POWER MOSFET | 25 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | Si | N-Channel | 650 V | 7 A | 670 mOhms | 3 V | 12.5 nC | MDmesh II Plus | ||||
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Ein Angebot |
1,508
Verfügbar auf Lager
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STMicroelectronics | MOSFET N-CH 950V 2Ohm typ 3.5A Zener-protected | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 950 V | 3.5 A | 2 Ohms | 4 V | 12.5 nC | ||||
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Ein Angebot |
2,000
Verfügbar auf Lager
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Diodes Incorporated | MOSFET MOSFET BVDSS: 31V-40 PowerDI3333-8 T&R 2K | 20 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 10.5 A | 15 mOhms | 2.5 V | 12.5 nC | Enhancement | |||
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Ein Angebot |
5,423
Verfügbar auf Lager
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Diodes Incorporated | MOSFET 30V N-Ch Enh Mode 20Vgss 1.2W 643pF | 20 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 6.6 A | 22 mOhms | 1.5 V | 12.5 nC | Enhancement | |||
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Ein Angebot |
2,415
Verfügbar auf Lager
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Texas Instruments | MOSFET 30V Sync Buck NexFET | 10 V | SMD/SMT | LSON-CLIP-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V, 30 V | 25 A | 9 mOhms, 2.8 mOhms | 2.1 V | 12.5 nC | NexFET |
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