- Hersteller :
- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Tradename :
- Ausgewählter Filter :
6 Produkt
Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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Ein Angebot |
659
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 60V 180A D2PAK-6 OptiMOS 3 | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 180 A | 1.3 mOhms | 2 V | 275 nC | Enhancement | OptiMOS | |||
|
Ein Angebot |
15
Verfügbar auf Lager
|
IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 600V/66A | 30 V | Chassis Mount | SOT-227-4 | Tube | 1 Channel | Si | N-Channel | 600 V | 66 A | 75 mOhms | 275 nC | HyperFET | |||||||
|
Ein Angebot |
4,000
Verfügbar auf Lager
|
Infineon / IR | MOSFET N-CHANNEL 55 / 60 | 20 V | SMD/SMT | DirectFET-L8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 375 A | 1.1 mOhms | 2 V | 275 nC | Enhancement | ||||
|
Ein Angebot |
25
Verfügbar auf Lager
|
IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 600V/82A | 30 V | Through Hole | PLUS-264-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 82 A | 75 mOhms | 275 nC | HyperFET | |||||||
|
Ein Angebot |
1,000
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 60V 180A D2PAK-6 OptiMOS 3 | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 180 A | 1.3 mOhms | 2 V | 275 nC | Enhancement | OptiMOS | |||
|
siehe | Infineon Technologies | MOSFET N-Ch 60V 180A D2PAK-6 OptiMOS 3 | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 180 A | 1.3 mOhms | 2 V | 275 nC | Enhancement |
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