- Mounting Style :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Tradename :
- Ausgewählter Filter :
17 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Ein Angebot |
2,483
Verfügbar auf Lager
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IXYS | MOSFET -48.0 Amps -200V 0.085 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 200 V | - 48 A | 85 mOhms | - 4 V | 103 nC | Enhancement | PolarP | ||
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Ein Angebot |
816
Verfügbar auf Lager
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IXYS | MOSFET 12 Amps 1200V 1.15 Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 12 A | 1.35 Ohms | 6.5 V | 103 nC | Enhancement | Polar, HiPerFET | ||
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Ein Angebot |
88
Verfügbar auf Lager
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IXYS | MOSFET -20.0 Amps -500V 0.450 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 500 V | - 20 A | 450 mOhms | - 4 V | 103 nC | Enhancement | PolarP | ||
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Ein Angebot |
170
Verfügbar auf Lager
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IXYS | MOSFET MOSFET N CHANNEL | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 75 V | 80 A | 24 mOhms | 2.5 V | 103 nC | Enhancement | |||
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Ein Angebot |
228
Verfügbar auf Lager
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Infineon Technologies | MOSFET Auto 40V N-Ch FET 1.65mOhm 100A | 20 V | Through Hole | TO-251-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 100 A | 1.98 mOhms | 2.2 V to 3.9 V | 103 nC | Enhancement | CoolIRFet | ||
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Ein Angebot |
31
Verfügbar auf Lager
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IXYS | MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 75 V | 80 A | 24 mOhms | 2.5 V | 103 nC | Enhancement | LinearL2 | |||
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Ein Angebot |
2,392
Verfügbar auf Lager
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Toshiba | MOSFET 40 Volt N-Channel | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 175 C | Reel | Si | N-Channel | 40 V | 150 A | 850 uOhms | 1.4 V | 103 nC | Enhancement | ||||
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Ein Angebot |
3,211
Verfügbar auf Lager
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Toshiba | MOSFET N-CH Mosfet 40V 150A 8DSOP | 20 V | SMD/SMT | DSOP-Advance-8 | - | - | Reel | 1 Channel | Si | N-Channel | 40 V | 150 A | 0.65 mOhms | 1.4 V | 103 nC | Enhancement | |||
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Ein Angebot |
3,000
Verfügbar auf Lager
|
STMicroelectronics | MOSFET | 20 V | SMD/SMT | PowerFLAT-5x6-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 130 A | 3.15 mOhms | 2.5 V | 103 nC | Enhancement | |||
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siehe | IXYS | MOSFET | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 75 V | 80 A | 24 mOhms | 2.5 V | 103 nC | Enhancement | LinearL2 | ||||
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siehe | Diodes Incorporated | MOSFET 20V P-Ch Enh FET 10Vgss -80A Idm | 10 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 42 A | 12.5 mOhms | - 400 mV | 103 nC | Enhancement | ||||
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Ein Angebot |
47
Verfügbar auf Lager
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Nexperia | MOSFET N-channel 60 V 3.9 mo FET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 130 A | 2.94 mOhms | 3 V | 103 nC | Enhancement | |||
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siehe | Infineon Technologies | MOSFET Auto 40V N-Ch FET 1.98mOhms 100A | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 100 A | 1.98 mOhms | 2.2 V to 3.9 V | 103 nC | Enhancement | CoolIRFet | |||
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siehe | Infineon Technologies | MOSFET Auto 40V N-Ch FET 1.98mOhms 100A | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 1.65 mOhms | 103 nC | CoolIRFet | ||||||||
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siehe | Nexperia | MOSFET BUK763R9-60E/D2PAK/REEL 13" Q1 | SMD/SMT | TO-263-3 | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 8.5 mOhms | 4.5 V | 103 nC | ||||||||
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siehe | Infineon Technologies | MOSFET N-CHANNEL_30/40V | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 80 A | 3.2 mOhms | 3 V | 103 nC | Enhancement | ||||
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siehe | Diodes Incorporated | MOSFET 20V P-Ch Enh FET 10Vgss -80A Idm | 10 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 42 A | 12.5 mOhms | - 400 mV | 103 nC | Enhancement |
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