- Hersteller :
- Package / Case :
- Number of Channels :
- Rds On - Drain-Source Resistance :
- Ausgewählter Filter :
2 Produkt
Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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Ein Angebot |
2,818
Verfügbar auf Lager
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Nexperia | MOSFET 30V N-channel Trench MOSFET | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 5.6 A | 31 mOhms | 1 V | 6.3 nC | Enhancement | ||||
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Ein Angebot |
2,324
Verfügbar auf Lager
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Texas Instruments | MOSFET Dual 30V N-CH NexFET Pwr MOSFETs | 10 V | SMD/SMT | VSON-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 27 A | 38 mOhms | 1 V | 6.3 nC | NexFET |
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