- Vgs - Gate-Source Voltage :
- Mounting Style :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Ausgewählter Filter :
10 Produkt
Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Ein Angebot |
3,130
Verfügbar auf Lager
|
Infineon Technologies | MOSFET MOSFT 40V 343A 1.7mOhm 108nC | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 343 A | 1.4 mOhms | 2.5 V | 108 nC | |||||
|
Ein Angebot |
3,938
Verfügbar auf Lager
|
Vishay / Siliconix | MOSFET P Ch -60Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 52 A | 0.0155 Ohms | - 2.5 V | 108 nC | Enhancement | ||||
|
Ein Angebot |
580
Verfügbar auf Lager
|
Infineon Technologies | MOSFET 40V 1 N-CH HEXFET 1.7mOhms 108nC | 20 V | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | N-Channel | 40 V | 343 A | 2 mOhms | 108 nC | ||||||||
|
Ein Angebot |
269
Verfügbar auf Lager
|
Infineon / IR | MOSFET MOSFT 40V 327A 1.7mOhm 108nC TO221 | 20 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 40 V | 327 A | 2 mOhms | 108 nC | ||||||||
|
Ein Angebot |
172
Verfügbar auf Lager
|
Texas Instruments | MOSFET CSD18536KCS 60 V N-Channel NexFET? Power MOSFET... | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 200 A | 1.3 mOhms | 1.4 V | 108 nC | Enhancement | ||||
|
Ein Angebot |
10,000
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 60V 90A CanPAK3 MN OptiMOS 3 | 20 V | SMD/SMT | WDSON-2-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 90 A | 2.8 mOhms | 108 nC | OptiMOS | |||||
|
Ein Angebot |
6,000
Verfügbar auf Lager
|
Vishay / Siliconix | MOSFET N-Channel 100V PowerPAK SO-8 | +/- 20 V | SMD/SMT | PowerPAK-SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 95 A | 0.004 Ohms | 2 V | 108 nC | Enhancement | ||||
|
siehe | Vishay / Siliconix | MOSFET P Ch -30Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 75 A | 0.0064 Ohms | - 2.5 V | 108 nC | Enhancement | |||||
|
siehe | Nexperia | MOSFET TrenchMOS N-Channel | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 100 A | 8.1 mOhms | 3 V | 108 nC | Enhancement | |||||
|
siehe | Infineon Technologies | MOSFET Auto 40V Sngl N-Ch HEXFET PowerMOSFET | 20 V | SMD/SMT | TO-252-3 | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 343 A | 2 mOhms | 108 nC |
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