- Hersteller :
- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Transistor Polarity :
- Rds On - Drain-Source Resistance :
- Ausgewählter Filter :
11 Produkt
Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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Ein Angebot |
1,818
Verfügbar auf Lager
|
STMicroelectronics | MOSFET N-Ch 900 Volt 2.1Amp Zener SuperMESH | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 900 V | 2.1 A | 6.5 Ohms | 19.5 nC | Enhancement | ||||
|
Ein Angebot |
2,399
Verfügbar auf Lager
|
STMicroelectronics | MOSFET N-Ch 900 Volt 2.1Amp Zener SuperMESH | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 2.1 A | 6.5 Ohms | 19.5 nC | Enhancement | ||||
|
Ein Angebot |
865
Verfügbar auf Lager
|
STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 11 A | 360 mOhms | 3 V | 19.5 nC | Enhancement | |||
|
Ein Angebot |
400
Verfügbar auf Lager
|
STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 550 V | 13 A | 280 mOhms | 3 V | 19.5 nC | ||||
|
Ein Angebot |
803
Verfügbar auf Lager
|
STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 13 A | 280 mOhms | 3 V | 19.5 nC | Enhancement | |||
|
Ein Angebot |
776
Verfügbar auf Lager
|
STMicroelectronics | MOSFET POWER MOSFET | 25 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 11 A | 320 mOhms | 2 V | 19.5 nC | Enhancement | |||
|
Ein Angebot |
940
Verfügbar auf Lager
|
STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 11 A | 360 mOhms | 2 V | 19.5 nC | Enhancement | |||
|
Ein Angebot |
283
Verfügbar auf Lager
|
STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 11 A | 320 mOhms | 2 V | 19.5 nC | Enhancement | |||
|
Ein Angebot |
352
Verfügbar auf Lager
|
STMicroelectronics | MOSFET POWER MOSFET | 25 V | SMD/SMT | PowerFLAT-5x6-HV-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 7.5 A | 395 mOhms | 3 V | 19.5 nC | Enhancement | |||
|
Ein Angebot |
20,108
Verfügbar auf Lager
|
Toshiba | MOSFET Small-signal MOSFET Vdss= -12V, ID= -6A | +/- 10 V | SMD/SMT | SOT-23-3 | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 6 A | 13.9 mOhms | - 1 V | 19.5 nC | Enhancement | ||||
|
Ein Angebot |
2,465
Verfügbar auf Lager
|
STMicroelectronics | MOSFET POWER MOSFET | 25 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 550 V | 13 A | 240 mOhms | 2 V | 19.5 nC | Enhancement |
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