- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Transistor Polarity :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Tradename :
- Ausgewählter Filter :
5 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Ein Angebot |
537
Verfügbar auf Lager
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Fairchild Semiconductor | MOSFET 600V N-Channel SuperFET II MOSFET | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 37 A | 275 mOhms | 3 V | 109 nC | Enhancement | SuperFET II | ||
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|
Ein Angebot |
621
Verfügbar auf Lager
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IXYS | MOSFET 170 Amps 75V | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 170 A | 5.4 mOhms | 4 V | 109 nC | Enhancement | TrenchT2 | ||
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siehe | IXYS | MOSFET 200 Amps 55V 0.0042 Rds | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 200 A | 3.3 mOhms | 4 V | 109 nC | Enhancement | TrenchT2 | |||
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siehe | Vishay / Siliconix | MOSFET P Ch -30Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 30 A | 0.007 Ohms | - 2.5 V | 109 nC | Enhancement | ||||
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Ein Angebot |
112
Verfügbar auf Lager
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STMicroelectronics | MOSFET N-Ch 24V 0.95mOhm 180A STripFET Mosfet | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 24 V | 180 A | 1.2 mOhms | 109 nC | Enhancement |
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