- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Ausgewählter Filter :
10 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Ein Angebot |
26,157
Verfügbar auf Lager
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Infineon Technologies | MOSFET N-Ch 60V 100A TDSON-8 OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 1.2 mOhms | 2.1 V | 104 nC | Enhancement | |||
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Ein Angebot |
4,393
Verfügbar auf Lager
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Infineon Technologies | MOSFET N-Ch 60V 100A TDSON-8 OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 1.2 mOhms | 2.1 V | 104 nC | Enhancement | OptiMOS | ||
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Ein Angebot |
975
Verfügbar auf Lager
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Infineon Technologies | MOSFET P-Ch -40V -80A D2PAK-2 OptiMOS-P2 | +/- 16 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 80 A | 5.5 mOhms | - 2.2 V | 104 nC | Enhancement | OptiMOS | ||
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Ein Angebot |
1,480
Verfügbar auf Lager
|
ROHM Semiconductor | MOSFET N-Ch 650V SiC 70A 30mOhm TrenchMOS | 22 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | SiC | N-Channel | 650 V | 70 A | 30 mOhms | 5.6 V | 104 nC | Enhancement | |||
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Ein Angebot |
62
Verfügbar auf Lager
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GeneSiC Semiconductor | MOSFET 1200V 45A Standard | 3.44 V | SMD/SMT | TO-263-7 | Reel | SiC | N-Channel | 1200 V | 45 A | 50 mOhms | 104 nC | Enhancement | |||||||
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siehe | Infineon Technologies | MOSFET P-Ch -40V -80A D2PAK-2 OptiMOS-P2 | +/- 16 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 80 A | 5.5 mOhms | - 2.2 V | 104 nC | Enhancement | ||||
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Ein Angebot |
490
Verfügbar auf Lager
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Nexperia | MOSFET N-Ch 80V 4.3 mOhms | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 120 A | 4.3 mOhms | 3 V | 104 nC | ||||
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siehe | Nexperia | MOSFET N-Ch 80V 4.3 mOhms | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 120 A | 4.3 mOhms | 3 V | 104 nC | |||||
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siehe | Shindengen | MOSFET 75V, 100A EETMOS POWER MOSFET | 20 V | Through Hole | TO-220-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 75 V | 100 A | 4.2 mOhms | 3 V | 104 nC | Enhancement | |||||
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siehe | STMicroelectronics | MOSFET N-Ch 200V 0.019 61A Mdmesh V | 25 V | SMD/SMT | TO-263-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 61 A | 23 mOhms | 5 V | 104 nC |
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