- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Ausgewählter Filter :
4 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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Ein Angebot |
637
Verfügbar auf Lager
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STMicroelectronics | MOSFET POWER MOSFET | 20 V | SMD/SMT | H2PAK-2 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 180 A | 4.5 mOhms | 2 V | 114.6 nC | Enhancement | ||
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Ein Angebot |
910
Verfügbar auf Lager
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STMicroelectronics | MOSFET N-Ch 100V 3.9 mOhm 180A STripFET | 20 V | SMD/SMT | H2PAK-2 | Reel | 1 Channel | Si | N-Channel | 100 V | 120 A | 4.5 mOhms | 4 V | 114.6 nC | |||||
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Ein Angebot |
535
Verfügbar auf Lager
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STMicroelectronics | MOSFET POWER MOSFET | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 180 A | 3.9 mOhms | 2 V | 114.6 nC | Enhancement | ||
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siehe | STMicroelectronics | MOSFET N-Ch 100V 3.9 mOhm 180A STripFET | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 120 A | 4.5 mOhms | 4 V | 114.6 nC |
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