- Rds On - Drain-Source Resistance :
- Ausgewählter Filter :
2 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
Ein Angebot |
7,977
Verfügbar auf Lager
|
STMicroelectronics | MOSFET POWER MOSFET | 20 V | SMD/SMT | PowerFLAT-5x6-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 260 A | 1.3 mOhms | 1 V | 61.5 nC | Enhancement | ||
|
|
|
siehe | STMicroelectronics | MOSFET N-Ch 30V 0.0011 Ohm 35A STripFET VI | 20 V | SMD/SMT | PowerFLAT-5x6-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 160 A | 1.1 mOhms | 1 V | 61.5 nC |
1 / 1 Seite
