Schaffung einer zuverlässigen Handelsplattform für globale Hersteller und Lieferanten.
Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
Rds On - Drain-Source Resistance :
Vgs th - Gate-Source Threshold Voltage :
3 Produkt
Bild Modell Preis Anzahl Lager Hersteller Beschreibung Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
IPB60R165CP
1+
$1.5600
10+
$1.3240
100+
$1.1480
250+
$1.0920
1000+
$0.8240
Ein Angebot
RFQ
3,374
Verfügbar auf Lager
Infineon Technologies MOSFET N-Ch 650V 21A D2PAK-2 CoolMOS CP 20 V SMD/SMT TO-263-3 - 55 C + 150 C Reel 1 Channel Si N-Channel 600 V 21 A 150 mOhms 2.5 V 52 nC Enhancement CoolMOS
IPB60R165CPATMA1
1+
$1.5600
10+
$1.3240
100+
$1.1480
250+
$1.0920
1000+
$0.8240
Ein Angebot
RFQ
1,000
Verfügbar auf Lager
Infineon Technologies MOSFET N-Ch 650V 21A D2PAK-2 CoolMOS CP 20 V SMD/SMT TO-263-3 - 55 C + 150 C Reel 1 Channel Si N-Channel 600 V 21 A 150 mOhms 2.5 V 52 nC Enhancement CoolMOS
RSJ400N06TL
1000+
$0.4360
2000+
$0.4080
5000+
$0.3904
10000+
$0.3752
siehe
RFQ
ROHM Semiconductor MOSFET 20 V SMD/SMT TO-263-3 - 55 C + 150 C Reel 1 Channel Si N-Channel 60 V 40 A 11 mOhms 1 V 52 nC Enhancement