- Hersteller :
- Rds On - Drain-Source Resistance :
- Ausgewählter Filter :
3 Produkt
Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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Ein Angebot |
3,374
Verfügbar auf Lager
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Infineon Technologies | MOSFET N-Ch 650V 21A D2PAK-2 CoolMOS CP | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 21 A | 150 mOhms | 2.5 V | 52 nC | Enhancement | CoolMOS | |||
|
Ein Angebot |
1,000
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 650V 21A D2PAK-2 CoolMOS CP | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 21 A | 150 mOhms | 2.5 V | 52 nC | Enhancement | CoolMOS | |||
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siehe | ROHM Semiconductor | MOSFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 40 A | 11 mOhms | 1 V | 52 nC | Enhancement |
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