Schaffung einer zuverlässigen Handelsplattform für globale Hersteller und Lieferanten.
Vgs - Gate-Source Voltage :
Packaging :
Transistor Polarity :
Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
Rds On - Drain-Source Resistance :
Vgs th - Gate-Source Threshold Voltage :
6 Produkt
Bild Modell Preis Anzahl Lager Hersteller Beschreibung Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
IPP60R165CP
1+
$1.5600
10+
$1.3240
100+
$1.1480
250+
$1.0920
Ein Angebot
RFQ
975
Verfügbar auf Lager
Infineon Technologies MOSFET N-Ch 650V 21A TO220-3 CoolMOS CP 20 V Through Hole TO-220-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 600 V 21 A 150 mOhms 2.5 V 52 nC Enhancement CoolMOS
IPP60R165CPXKSA1
1+
$1.5600
10+
$1.3240
100+
$1.1480
250+
$1.0920
Ein Angebot
RFQ
300
Verfügbar auf Lager
Infineon Technologies MOSFET N-Ch 650V 21A TO220-3 CoolMOS CP 20 V Through Hole TO-220-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 600 V 21 A 150 mOhms 2.5 V 52 nC Enhancement CoolMOS
CSD18502KCS
1+
$0.8600
10+
$0.7720
25+
$0.7320
100+
$0.6200
Ein Angebot
RFQ
523
Verfügbar auf Lager
Texas Instruments MOSFET 40-V, N-Chanel NxFT Pwr MOSFETs 20 V Through Hole TO-220-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 40 V 100 A 4.3 mOhms 1.8 V 52 nC   NexFET
IXTP26P10T
50+
$0.9280
100+
$0.8040
250+
$0.7640
500+
$0.6840
siehe
RFQ
IXYS MOSFET MOSFET P-CH 200V 26A TO-220 15 V Through Hole TO-220-3 - 55 C + 150 C Tube 1 Channel Si P-Channel - 100 V - 26 A 90 mOhms - 4.5 V 52 nC Enhancement  
TK42E12N1,S1X
1+
$0.5800
10+
$0.4640
100+
$0.3576
500+
$0.3160
Ein Angebot
RFQ
189
Verfügbar auf Lager
Toshiba MOSFET N-Ch 88A 140W FET 120V 3100pF 52nC 20 V Through Hole TO-220-3 - 55 C + 150 C   1 Channel Si N-Channel 120 V 88 A 7.8 mOhms 2 V to 4 V 52 nC Enhancement  
TK42A12N1,S4X
50+
$0.4640
100+
$0.3576
500+
$0.3160
1000+
$0.2496
siehe
RFQ
Toshiba MOSFET MOSFET NCh7.8ohm VGS10V10uAVDS120V 20 V Through Hole TO-220FP-3 - 55 C + 150 C Reel 1 Channel Si N-Channel 120 V 42 A 7.8 mOhms 2 V to 4 V 52 nC Enhancement