- Mounting Style :
- Package / Case :
- Ausgewählter Filter :
4 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
Ein Angebot |
975
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 650V 21A TO220-3 CoolMOS CP | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 21 A | 150 mOhms | 2.5 V | 52 nC | Enhancement | CoolMOS | ||
|
|
|
Ein Angebot |
300
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 650V 21A TO220-3 CoolMOS CP | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 21 A | 150 mOhms | 2.5 V | 52 nC | Enhancement | CoolMOS | ||
|
|
Ein Angebot |
3,374
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 650V 21A D2PAK-2 CoolMOS CP | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 21 A | 150 mOhms | 2.5 V | 52 nC | Enhancement | CoolMOS | ||
|
|
|
Ein Angebot |
1,000
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 650V 21A D2PAK-2 CoolMOS CP | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 21 A | 150 mOhms | 2.5 V | 52 nC | Enhancement | CoolMOS |
1 / 1 Seite
