Modell	Preis	Anzahl		Lager	Hersteller	Beschreibung	Vgs - Gate-Source Voltage	Mounting Style	Package / Case	Minimum Operating Temperature	Maximum Operating Temperature	Packaging	Number of Channels	Technology	Transistor Polarity	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Channel Mode
IRFH3702TRPBF	1+ $0.2560 10+ $0.2096 100+ $0.1276 1000+ $0.0988 4000+ $0.0844	Ein Angebot	PDF RFQ	7,088 Verfügbar auf Lager	Infineon / IR	MOSFET 30V 1 N-CH HEXFET 7.1mOhms 9.6nC	20 V	SMD/SMT	PQFN-8			Reel	1 Channel	Si	N-Channel	30 V	42 A	7.1 mOhms		9.6 nC
ZXMP7A17KTC	1+ $0.3440 10+ $0.2852 100+ $0.1840 1000+ $0.1472 2500+ $0.1244	Ein Angebot	PDF RFQ	4,094 Verfügbar auf Lager	Diodes Incorporated	MOSFET 70V P-Channel 5.7A MOSFET	20 V	SMD/SMT	TO-252-3	- 55 C	+ 150 C	Reel	1 Channel	Si	P-Channel	- 70 V	- 5.7 A	160 mOhms	- 1 V	9.6 nC	Enhancement
IRFR3707ZTRPBF	1+ $0.3560 10+ $0.3052 100+ $0.2344 500+ $0.2072 2000+ $0.1448	Ein Angebot	PDF RFQ	1,962 Verfügbar auf Lager	Infineon / IR	MOSFET 30V 1 N-CH HEXFET 9.5mOhms 9.6nC	20 V	SMD/SMT	TO-252-3	- 55 C	+ 175 C	Reel	1 Channel	Si	N-Channel	30 V	56 A	9.5 mOhms	1.35 V to 2.35 V	9.6 nC	Enhancement
ZXMN10A25KTC	1+ $0.5000 10+ $0.4240 100+ $0.3252 500+ $0.2876 2500+ $0.2012	Ein Angebot	PDF RFQ	866 Verfügbar auf Lager	Diodes Incorporated	MOSFET N-Chan 100V MOSFET (UMOS)	20 V	SMD/SMT	TO-252-3	- 55 C	+ 150 C	Reel	1 Channel	Si	N-Channel	100 V	6.4 A	125 mOhms	4 V	9.6 nC	Enhancement
DMN4026SK3-13	1+ $0.2240 10+ $0.1860 100+ $0.1200 1000+ $0.0960 2500+ $0.0812	Ein Angebot	PDF RFQ	2,163 Verfügbar auf Lager	Diodes Incorporated	MOSFET 40V N-Ch Enh FET 20Vgss 1.6W 1181pF	20 V	SMD/SMT	TO-252-3	- 55 C	+ 150 C	Reel	1 Channel	Si	N-Channel	40 V	28 A	20 mOhms	1 V	9.6 nC	Enhancement
NVD5C684NLT4G	1+ $0.3960 10+ $0.3352 100+ $0.2572 500+ $0.2276 2500+ $0.1592	Ein Angebot	PDF RFQ	2,500 Verfügbar auf Lager	ON Semiconductor	MOSFET T6 60V LL DPAK	+/- 20 V	SMD/SMT	TO-252-3	- 55 C	+ 175 C	Reel	1 Channel	Si	N-Channel	60 V	38 A	13.7 mOhms	1.2 V	9.6 nC	Enhancement
TSM60NB900CP ROG	15000+ $0.1456 24375+ $0.1412	Ein Angebot siehe	PDF RFQ		Taiwan Semiconductor	MOSFET 600V 4Amp 0.9OHMS N channel Power Mosfet	+/- 30 V	SMD/SMT	TO-252-3	- 55 C	+ 150 C	Reel	1 Channel		N-Channel	600 V	4 A	0.69 Ohms	2 V	9.6 nC	Enhancement
TSM60NB900CH C5G	15000+ $0.1456 24375+ $0.1412	Ein Angebot siehe	PDF RFQ		Taiwan Semiconductor	MOSFET 600V 4Amp 0.9OHMS N channel Power Mosfet	+/- 30 V	Through Hole	TO-251-3	- 55 C	+ 150 C	Reel	1 Channel		N-Channel	600 V	4 A	0.69 Ohms	2 V	9.6 nC	Enhancement
IRFU3707ZPBF	1+ $0.5040 10+ $0.4280 100+ $0.3312 500+ $0.2928	Ein Angebot	PDF RFQ	1,589 Verfügbar auf Lager	Infineon / IR	MOSFET MOSFT 30V 56A 9.5mOhm 9.6nC	20 V	Through Hole	TO-251-3			Tube	1 Channel	Si	N-Channel	30 V	56 A	12.5 mOhms		9.6 nC