- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Tradename :
- Ausgewählter Filter :
8 Produkt
Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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Ein Angebot |
334
Verfügbar auf Lager
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STMicroelectronics | MOSFET N-channel 600 V, 0.35 Ohm typ., 11 A MDmesh M2 Power MOS... | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 11 A | 350 mOhms | 2 V | 17 nC | Enhancement | ||||
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Ein Angebot |
941
Verfügbar auf Lager
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STMicroelectronics | MOSFET POWER MOSFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1050 V | 4 A | 1.4 Ohms | 3 V | 17 nC | Enhancement | ||||
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Ein Angebot |
998
Verfügbar auf Lager
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STMicroelectronics | MOSFET | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 11 A | 378 mOhms | 2 V | 17 nC | Enhancement | |||||
|
Ein Angebot |
492
Verfügbar auf Lager
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Fairchild Semiconductor | MOSFET 600V NChannel MOSFET UniFET-II | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 6.5 A | 1.25 Ohms | 5 V | 17 nC | Enhancement | UniFET | ||||
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Ein Angebot |
579
Verfügbar auf Lager
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-220FP-3 | + 150 C | 1 Channel | Si | N-Channel | 650 V | 10 A | 370 mOhms | 2 V | 17 nC | Enhancement | ||||||
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Ein Angebot |
478
Verfügbar auf Lager
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Infineon Technologies | MOSFET N-Ch 600V 9A TO220FP-3 CoolMOS CP | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 9 A | 385 mOhms | 17 nC | Enhancement | CoolMOS | ||||
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Ein Angebot |
393
Verfügbar auf Lager
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STMicroelectronics | MOSFET N-channel 650 V, 0.37 Ohm typ., 10 A MDmesh M2 Power MOS... | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 650 V | 10 A | 430 mOhms | 3 V | 17 nC | Enhancement | |||||
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Ein Angebot |
228
Verfügbar auf Lager
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Infineon Technologies | MOSFET N-Ch 500V 9A TO220FP-3 CoolMOS CP | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 9 A | 399 mOhms | 17 nC | Enhancement | CoolMOS |
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