- Hersteller :
- Rds On - Drain-Source Resistance :
- Ausgewählter Filter :
2 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | |
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Ein Angebot |
871
Verfügbar auf Lager
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STMicroelectronics | MOSFET N-CH 600V 0.35Ohm 11A Mdmesh M2 | 25 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 11 A | 380 mOhms | 3 V | 17 nC | ||
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siehe | Infineon Technologies | MOSFET MOSFT 30V 87A 6.3mOhm 17nC Qg | 20 V | SMD/SMT | TO-263-3 | Reel | 1 Channel | Si | N-Channel | 30 V | 87 A | 7.8 mOhms | 17 nC |
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