- Package / Case :
- Maximum Operating Temperature :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Tradename :
- Ausgewählter Filter :
28 Produkt
Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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Ein Angebot |
334
Verfügbar auf Lager
|
STMicroelectronics | MOSFET N-channel 600 V, 0.35 Ohm typ., 11 A MDmesh M2 Power MOS... | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 11 A | 350 mOhms | 2 V | 17 nC | Enhancement | ||||
|
Ein Angebot |
941
Verfügbar auf Lager
|
STMicroelectronics | MOSFET POWER MOSFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1050 V | 4 A | 1.4 Ohms | 3 V | 17 nC | Enhancement | ||||
|
Ein Angebot |
2,628
Verfügbar auf Lager
|
STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-251-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 10 A | 370 mOhms | 2 V | 17 nC | Enhancement | |||||
|
Ein Angebot |
1,490
Verfügbar auf Lager
|
STMicroelectronics | MOSFET | 25 V | Through Hole | TO-281-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 11 A | 378 mOhms | 2 V | 17 nC | Enhancement | |||||
|
Ein Angebot |
1,000
Verfügbar auf Lager
|
STMicroelectronics | MOSFET POWER MOSFET | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 1050 V | 4 A | 2 Ohms | 3 V | 17 nC | Enhancement | |||||
|
Ein Angebot |
1,050
Verfügbar auf Lager
|
STMicroelectronics | MOSFET | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 11 A | 378 mOhms | 2 V | 17 nC | Enhancement | |||||
|
Ein Angebot |
600
Verfügbar auf Lager
|
STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 11 A | 380 mOhms | 3 V | 17 nC | Enhancement | ||||
|
Ein Angebot |
998
Verfügbar auf Lager
|
STMicroelectronics | MOSFET | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 11 A | 378 mOhms | 2 V | 17 nC | Enhancement | |||||
|
Ein Angebot |
838
Verfügbar auf Lager
|
STMicroelectronics | MOSFET N-CH 600V 0.35Ohm 11A Mdmesh M2 | 25 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 11 A | 380 mOhms | 3 V | 17 nC | |||||
|
Ein Angebot |
582
Verfügbar auf Lager
|
STMicroelectronics | MOSFET POWER MOSFET | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1050 V | 4 A | 2 Ohms | 3 V | 17 nC | Enhancement | ||||
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Ein Angebot |
492
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET 600V NChannel MOSFET UniFET-II | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 6.5 A | 1.25 Ohms | 5 V | 17 nC | Enhancement | UniFET | ||||
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Ein Angebot |
617
Verfügbar auf Lager
|
STMicroelectronics | MOSFET N-CH 600V 0.35Ohm 11A Mdmesh M2 | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 11 A | 380 mOhms | 3 V | 17 nC | |||||
|
Ein Angebot |
579
Verfügbar auf Lager
|
STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-220FP-3 | + 150 C | 1 Channel | Si | N-Channel | 650 V | 10 A | 370 mOhms | 2 V | 17 nC | Enhancement | ||||||
|
Ein Angebot |
478
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 600V 9A TO220FP-3 CoolMOS CP | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 9 A | 385 mOhms | 17 nC | Enhancement | CoolMOS | ||||
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Ein Angebot |
848
Verfügbar auf Lager
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-220-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 10 A | 370 mOhms | 2 V | 17 nC | Enhancement | |||||
|
Ein Angebot |
393
Verfügbar auf Lager
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STMicroelectronics | MOSFET N-channel 650 V, 0.37 Ohm typ., 10 A MDmesh M2 Power MOS... | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 650 V | 10 A | 430 mOhms | 3 V | 17 nC | Enhancement | |||||
|
Ein Angebot |
310
Verfügbar auf Lager
|
STMicroelectronics | MOSFET POWER MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1050 V | 4 A | 2 Ohms | 4 V | 17 nC | Enhancement | ||||
|
Ein Angebot |
228
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 500V 9A TO220FP-3 CoolMOS CP | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 9 A | 399 mOhms | 17 nC | Enhancement | CoolMOS | ||||
|
Ein Angebot |
490
Verfügbar auf Lager
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STMicroelectronics | MOSFET N-channel 650 V, 0.37 Ohm typ., 10 A MDmesh M2 Power MOS... | 25 V | Through Hole | TO-262-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 650 V | 10 A | 430 mOhms | 2 V to 4 V | 17 nC | Enhancement | |||||
|
Ein Angebot |
38
Verfügbar auf Lager
|
STMicroelectronics | MOSFET N-CH 600V 0.35Ohm 11A Mdmesh M2 | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 11 A | 380 mOhms | 3 V | 17 nC | |||||
|
Ein Angebot |
201
Verfügbar auf Lager
|
Infineon Technologies | MOSFET MOSFT 30V 87A 6.3mOhm 17nC Qg | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 30 V | 87 A | 7.8 mOhms | 17 nC | ||||||||
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siehe | STMicroelectronics | MOSFET N-CH 600V 0.35Ohm 11A Mdmesh M2 | 25 V | Through Hole | TO-281-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 11 A | 380 mOhms | 3 V | 17 nC | ||||||
|
Ein Angebot |
2,922
Verfügbar auf Lager
|
STMicroelectronics | MOSFET N-Ch 525V 1.2 Ohm 4.4A SuperMESH 3 | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 525 V | 4.4 A | 1.5 Ohms | 17 nC | Enhancement | |||||
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siehe | STMicroelectronics | MOSFET N-Ch 525V 1.2 Ohm 4.4A SuperMESH 3 | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 525 V | 4.4 A | 1.5 Ohms | 17 nC | Enhancement | ||||||
|
siehe | STMicroelectronics | MOSFET N-Ch 620V 2.5 Ohm 2.5A SuperMESH 3 | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 620 V | 2.5 A | 3 Ohms | 17 nC | |||||||
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siehe | Toshiba | MOSFET N-Ch MOS 13A 650V 170W 950pF 0.38 | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 13 A | 380 mOhms | 17 nC | Enhancement | |||||||
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Ein Angebot |
1,844
Verfügbar auf Lager
|
STMicroelectronics | MOSFET N-Ch 30V 0.0042 Ohm 75A STripFET VI | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 75 A | 5.9 mOhms | 1.7 V | 17 nC | Enhancement | ||||
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Ein Angebot |
332
Verfügbar auf Lager
|
Infineon / IR | MOSFET MOSFT 30V 86A 6.5mOhm 17nC | 20 V | Through Hole | TO-251-3 | Tube | 1 Channel | Si | N-Channel | 30 V | 86 A | 8.2 mOhms | 17 nC |
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