- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Ausgewählter Filter :
2 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
siehe | STMicroelectronics | MOSFET N-Ch 620V 2.5 Ohm SuperMESH3 3 Ohm RDS | 30 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 620 V | 2.5 A | 2.5 Ohms | 3.75 V | 17 nC | |||||
|
|
siehe | STMicroelectronics | MOSFET N-Ch 620V 2.5 Ohm 2.5A SuperMESH 3 | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 620 V | 2.5 A | 3 Ohms | 17 nC |
1 / 1 Seite
