- Vgs - Gate-Source Voltage :
- Package / Case :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Ausgewählter Filter :
5 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Ein Angebot |
3,610
Verfügbar auf Lager
|
Toshiba | MOSFET Small-Signal MOSFET | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 2 A | 580 mOhms | 800 mV | 6 nC | Enhancement | ||
|
|
Ein Angebot |
2,570
Verfügbar auf Lager
|
Micro Commercial Components (MCC) | MOSFET N-Channel MOSFET, SOT-23 package | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 3 A | 105 mOhms | 500 mV | 6 nC | Enhancement | ||
|
|
Ein Angebot |
1,500
Verfügbar auf Lager
|
ON Semiconductor | MOSFET AFSM T6 60V LL U8FL | +/- 20 V | SMD/SMT | WDFN-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 20 A | 22 mOhms | 1.2 V | 6 nC | Enhancement | ||
|
|
Ein Angebot |
850
Verfügbar auf Lager
|
Nexperia | MOSFET BUK9M53-60E/MLFPAK/REEL 7" Q1/ | 10 V | SMD/SMT | LFPAK33-5 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 17 A | 43 mOhms | 1.4 V | 6 nC | Enhancement | ||
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siehe | Taiwan Semiconductor | MOSFET 60V N channel MOSFET | 20 V | SMD/SMT | SOP-8 | Reel | 1 Channel | Si | N-Channel | 60 V | 3.5 A | 155 mOhms | - 3 V | 6 nC |
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