- Vgs - Gate-Source Voltage :
- Mounting Style :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
-
- 0.49 Ohms (2)
- 1.15 Ohms (4)
- 1.38 Ohms (2)
- 1.57 Ohms (1)
- 1.7 Ohms (1)
- 10 mOhms (1)
- 10 Ohms (1)
- 100 mOhms, 140 mOhms (1)
- 12.6 mOhms (1)
- 125 mOhms (1)
- 165 mOhms (1)
- 19 mOhms (1)
- 190 mOhms (1)
- 36 mOhms (1)
- 38 mOhms (1)
- 470 mOhms (1)
- 5.6 mOhms (1)
- 6.1 mOhms (1)
- 65 mOhms (1)
- 67 mOhms (2)
- 7.5 mOhms (1)
- 8.1 mOhms (1)
- 8.8 mOhms (1)
- 850 mOhms (1)
- Vgs th - Gate-Source Threshold Voltage :
- Tradename :
- Ausgewählter Filter :
30 Produkt
Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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Ein Angebot |
2,770
Verfügbar auf Lager
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Fairchild Semiconductor | MOSFET N-Chan UniFET2 500V | 25 V | Through Hole | TO-220-3 | - 55 C | + 125 C | Tube | 1 Channel | Si | N-Channel | 500 V | 4.5 A | 1.38 Ohms | 5 V | 9 nC | UniFET | ||||
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Ein Angebot |
3,578
Verfügbar auf Lager
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Diodes Incorporated | MOSFET ENHANCE MODE MOSFET 60V P-CHANNEL | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 6.6 A | 190 mOhms | - 1 V | 9 nC | Enhancement | ||||
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Ein Angebot |
8,740
Verfügbar auf Lager
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Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30 5V-30V,TSOT23,3K | 20 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V, 30 V | 3.4 A, 2.8 A | 100 mOhms, 140 mOhms | 9 nC | Enhancement | |||||
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Ein Angebot |
996
Verfügbar auf Lager
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Fairchild Semiconductor | MOSFET 500V N-Channel UniFET-II | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 4.2 A | 1.57 Ohms | 3 V to 5 V | 9 nC | UniFET | ||||
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Ein Angebot |
842
Verfügbar auf Lager
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Fairchild Semiconductor | MOSFET UniFET2 500V N-chan | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 125 C | Tube | 1 Channel | Si | N-Channel | 500 V | 4.5 A | 1.38 Ohms | 5 V | 9 nC | UniFET | ||||
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Ein Angebot |
4,916
Verfügbar auf Lager
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Nexperia | MOSFET 20V P-channel Trench MOSFET | +/- 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3.3 A | 67 mOhms | - 1.25 V | 9 nC | Enhancement | ||||
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Ein Angebot |
5,327
Verfügbar auf Lager
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Nexperia | MOSFET 20V P-channel Trench MOSFET | +/- 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3.3 A | 67 mOhms | - 1.25 V | 9 nC | Enhancement | ||||
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Ein Angebot |
374
Verfügbar auf Lager
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Infineon Technologies | MOSFET N-Ch 100V 35A TO220FP-3 OptiMOS 3 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 35 A | 12.6 mOhms | 9 nC | Enhancement | OptiMOS | ||||
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Ein Angebot |
2,115
Verfügbar auf Lager
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Diodes Incorporated | MOSFET MOSFET,P-CHANNEL 60V, -3.4A/-2.8A | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 2.7 A | 125 mOhms | - 1 V | 9 nC | |||||
|
Ein Angebot |
500
Verfügbar auf Lager
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Infineon Technologies | MOSFET N-Ch 80V 40A TO220FP-3 OptiMOS 3 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 40 A | 10 mOhms | 9 nC | Enhancement | OptiMOS | ||||
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Ein Angebot |
1,665
Verfügbar auf Lager
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Nexperia | MOSFET N-CH 25 V 6.1 MOHMS LOGIC LEVEL MOSFET | 20 V | SMD/SMT | LFPAK56-5 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 25 V | 73 A | 6.1 mOhms | 9 nC | ||||||
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Ein Angebot |
838
Verfügbar auf Lager
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 5 A | 1.15 Ohms | 3 V | 9 nC | MDmesh | ||||
|
Ein Angebot |
470
Verfügbar auf Lager
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Infineon Technologies | MOSFET | +/- 20 V | SMD/SMT | TO-220-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 6 A | 0.49 Ohms | 3 V | 9 nC | Enhancement | CoolMOS | ||||
|
Ein Angebot |
500
Verfügbar auf Lager
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Infineon Technologies | MOSFET | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 6 A | 0.49 Ohms | 3 V | 9 nC | Enhancement | CoolMOS | ||||
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Ein Angebot |
126
Verfügbar auf Lager
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ON Semiconductor | MOSFET TRENCH 3.1 30V 9 mOhm NCH | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 12.7 A | 19 mOhms | 1.8 V | 9 nC | |||||
|
Ein Angebot |
208
Verfügbar auf Lager
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ON Semiconductor | MOSFET NFET SO8FL 60V 71A 6.1MOH | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 71 A | 8.8 mOhms | 1.2 V | 9 nC | Enhancement | ||||
|
Ein Angebot |
101
Verfügbar auf Lager
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IXYS | MOSFET Polar Power Mosfet 800V 1A | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 1 A | 10 Ohms | 4 V | 9 nC | |||||
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Ein Angebot |
3,562
Verfügbar auf Lager
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Texas Instruments | MOSFET N-Ch NexFET Power MOSFETs | 16 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 100 A | 5.6 mOhms | 1.6 V | 9 nC | Enhancement | NexFET | |||
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Ein Angebot |
2,636
Verfügbar auf Lager
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Texas Instruments | MOSFET 30V N-Channel MOSFET | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 48 A | 8.1 mOhms | 1.5 V | 9 nC | NexFET | ||||
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Ein Angebot |
2,561
Verfügbar auf Lager
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Texas Instruments | MOSFET 30-V N-Ch NexFET Pwr MOSFET | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 60 A | 7.5 mOhms | 1.5 V | 9 nC | NexFET | ||||
|
Ein Angebot |
2,183
Verfügbar auf Lager
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ROHM Semiconductor | MOSFET TRNSISTR 4V DRVE PCH MOSFET CPT PKG | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 45 V | - 8 A | 65 mOhms | - 3 V | 9 nC | Enhancement | ||||
|
Ein Angebot |
3,000
Verfügbar auf Lager
|
Micro Commercial Components (MCC) | MOSFET N-Channel MOSFET, SOT-23 package | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 3.16 A | 38 mOhms | 1 V | 9 nC | Enhancement | ||||
|
Ein Angebot |
500
Verfügbar auf Lager
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Infineon Technologies | MOSFET N-Ch 600V 21A TO220FP-3 CoolMOS CP | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 21 A | 165 mOhms | 9 nC | Enhancement | CoolMOS | ||||
|
Ein Angebot |
1,000
Verfügbar auf Lager
|
STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 650 V | 5 A | 1.15 Ohms | 3 V | 9 nC | MDmesh | |||||
|
Ein Angebot |
3,001
Verfügbar auf Lager
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Fairchild Semiconductor | MOSFET 500V N-Channel UniFET-II | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 3.9 A | 1.7 Ohms | 3 V to 5 V | 9 nC | UniFET FRFET | ||||
|
siehe | ROHM Semiconductor | MOSFET POWER MOSFET SERIES | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | N-Channel | 250 V | 5 A | 850 mOhms | 9 nC | Enhancement | ||||||
|
siehe | STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 5 A | 1.15 Ohms | 3 V | 9 nC | MDmesh | |||||
|
siehe | STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 650 V | 5 A | 1.15 Ohms | 3 V | 9 nC | MDmesh | ||||||
|
siehe | ROHM Semiconductor | MOSFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 5 A | 470 mOhms | 3.25 V | 9 nC | Enhancement | |||||
|
Ein Angebot |
1
Verfügbar auf Lager
|
Infineon / IR | MOSFET MOSFT DUAL NCh 30V 4.6A | 12 V | SMD/SMT | TSSOP-8 | Reel | 2 Channel | Si | N-Channel | 30 V | 4.6 A | 36 mOhms | 9 nC |
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