- Vgs - Gate-Source Voltage :
- Package / Case :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Ausgewählter Filter :
3 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Ein Angebot |
2,907
Verfügbar auf Lager
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Fairchild Semiconductor | MOSFET PT8 30V/20V Nch PowerTrench SyncFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 19 A | 3.2 mOhms | 1.9 V | 33 nC | Enhancement | PowerTrench SyncFET | ||
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siehe | Taiwan Semiconductor | MOSFET Dual 30V P channel MOSFET | +/- 20 V | SMD/SMT | SOP-8 | Reel | 2 Channel | Si | P-Channel | - 30 V | - 7.1 A | 25 mOhms | - 3 V | 33 nC | |||||||
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siehe | Panasonic | MOSFET Wide Pad Dual Nchannel MOSFET | 12 V | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 10 A | 9 mOhms | 350 mV | 33 nC | Enhancement |
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