- Hersteller :
- Vgs - Gate-Source Voltage :
- Maximum Operating Temperature :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Ausgewählter Filter :
9 Produkt
Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Ein Angebot |
435
Verfügbar auf Lager
|
Infineon Technologies | MOSFET | +/- 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 18 A | 0.145 Ohms | 3 V | 25 nC | Enhancement | CoolMOS | ||||
|
Ein Angebot |
500
Verfügbar auf Lager
|
Infineon Technologies | MOSFET | +/- 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 18 A | 0.145 Ohms | 3 V | 25 nC | Enhancement | CoolMOS | ||||
|
Ein Angebot |
298
Verfügbar auf Lager
|
Toshiba | MOSFET N-Ch 600V 11.5A 35W DTMOSIV 890pF 25nC | 30 V | Through Hole | TO-220FP-3 | 1 Channel | Si | N-Channel | 600 V | 11.5 A | 265 mOhms | 2.7 V to 3.7 V | 25 nC | Enhancement | |||||||
|
Ein Angebot |
113
Verfügbar auf Lager
|
Toshiba | MOSFET MOSFET NChannel 0.33ohm DTMOS | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 650 V | 11.1 A | 330 mOhms | 2.5 V to 3.5 V | 25 nC | Enhancement | |||||
|
Ein Angebot |
4,705
Verfügbar auf Lager
|
Toshiba | MOSFET MOSFET N-ch 600V 10A | 30 V | Through Hole | TO-220FP-3 | 1 Channel | Si | N-Channel | 600 V | 10 A | 750 mOhms | 4 V | 25 nC | ||||||||
|
Ein Angebot |
200
Verfügbar auf Lager
|
Toshiba | MOSFET Power MOSFET N-Channel | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 9.7 A | 350 mOhms | 3 V | 25 nC | Enhancement | ||||
|
siehe | Toshiba | MOSFET MOSFET NCh 10ohm VGS10V10uAVDS80V | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 35 A | 10 mOhms | 2 V to 4 V | 25 nC | Enhancement | |||||
|
Ein Angebot |
674
Verfügbar auf Lager
|
STMicroelectronics | MOSFET N-Ch 100V 0.0145 Ohm typ 30A STripFET VII | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 30 A | 18 mOhms | 4.5 V | 25 nC | |||||
|
siehe | Toshiba | MOSFET N-Ch 900V 5A 45W PD Rdson 2.2 Ohm | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 5 A | 2.2 Ohms | 25 nC |
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